2
RF Device Data
Freescale Semiconductor, Inc.
MRF7S21170HR3 MRF7S21170HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1A
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics
(TA
=25?C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
=65Vdc,VGS
=0Vdc)
IDSS
—
—
10
?Adc
Zero Gate Voltage Drain Leakage Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
—
—
1
?Adc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
—
—
500
nAdc
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 372
?Adc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDS
=28Vdc,ID
= 1400 mAdc)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage
(1)
(VDD
=28Vdc,ID
= 1400 mAdc, Measured in Functional Test)
VGG(Q)
4.5
5.4
6.5
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=3.72Adc)
VDS(on)
0.1
0.15
0.3
Vdc
Dynamic Characteristics
(2)
Reverse Transfer Capacitance
(VDS
=28Vdc?
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
—
0.9
—
pF
Output Capacitance
(VDS
=28Vdc?
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Coss
—
703
—
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 1400 mA, Pout
= 50 W Avg., f = 2167.5 MHz,
Single--Carrier W--CDMA, IQ Magnitude
Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
?5MHzOffset.
Power Gain
Gps
15
16
18
dB
Drain Efficiency
?D
29
31
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
5.7
6.1
—
dB
Adjacent Channel Power Ratio
ACPR
—
-- 3 7
-- 3 5
dBc
Input Return Loss
IRL
—
-- 1 5
-- 9
dB
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
(continued)
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